?2008 fairchild semiconductor corporation fgl60n100bntd rev.a2 www.fairchildsemi.com igbt fgl60n100bntd fgl60n100bntd npt-trench igbt general description trench insulated gate bipolar transistors (igbts) with npt technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. these dev ices are well suited for induction heating ( i-h ) applications features ? high speed switching ? low saturation voltage : v ce(sat) = 2.5 v @ i c = 60a ? high input impedance ? built-in fast recovery diode absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol description fgl60n100bntd units v ces collector-emitter voltage 1000 v v ges gate-emitter voltage 25 v i c collector current @ t c = 25 c60 a collector current @ t c = 100 c42 a i cm (1) pulsed collector current 200 a i f diode continuous forward current @ t c = 100 c15 a i fm diode maximum forward current 200 a p d m a x i m u m p o w e r d i s s i p a t i o n @ t c = 25 c 180 w maximum power dissipation @ t c = 100 c72 w t j operating junction temperature -55 to +150 c t stg storage temperature range -55 to +150 c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 c symbol parameter typ. max. units r jc (igbt) thermal resistance, junction-to-case -- 0.69 c / w r jc (diode) thermal resistance, junction-to-case -- 2.08 c / w r ja thermal resistance, junction-to-ambient -- 25 c / w application micro- wave oven, i-h cooker, i-h ja r, induction heater, home appliance g c e to-264 g c e g c e
www.fairchildsemi.com fgl60n100bntd fgl60n100bntd rev.a2 electrical characteristics of igbt t c = 25 c unless otherwise noted electrical characteristics of diode t c = 25 c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv ces collector emitter breakdown voltage v ge = 0v, i c = 1ma 1000 -- -- v i ces collector cut-off current v ce = 1000v, v ge = 0v -- -- 1.0 ma i ges g-e leakage current v ge = 25, v ce = 0v -- -- 500 na on characteristics v ge(th) g-e threshold voltage i c = 60ma, v ce = v ge 4.0 5.0 7.0 v v ce(sat) collector to emitter saturation voltage i c = 10a , v ge = 15v -- 1.5 1.8 v i c = 60a , v ge = 15v -- 2.5 2.9 v dynamic characteristics c ies input capacitance v ce =10v , v ge = 0v, f = 1mhz -- 6000 -- pf c oes output capacitance -- 260 -- pf c res reverse transfer capacitance -- 200 -- pf switching characteristics t d(on) turn-on delay time v cc = 600 v, i c = 60a, r g = 51 ? , v ge =15v, resistive load, t c = 25 c -- 140 -- ns t r rise time -- 320 -- ns t d(off) turn-off delay time -- 630 -- ns t f fall time -- 130 250 ns q g total gate charge v ce = 600 v, i c = 60a, v ge = 15v , t c = 25 c -- 275 350 nc q ge gate-emitter charge -- 45 -- nc q gc gate-collector charge -- 95 -- nc symbol parameter test conditions min. typ. max. units v fm diode forward voltage i f = 15a -- 1.2 1.7 v i f = 60a -- 1.8 2.1 v t rr diode reverse recovery time i f = 60a di/dt = 20 a/us -- 1.2 1.5 s i r instantaneous reverse current v rrm = 1000v -- 0.05 2 a
www.fairchildsemi.com fgl60n100bntd fgl60n100bntd rev.a2 01234 0 50 100 150 200 20v 15v 10v 9v 8v 7v v ge = 6v common emitter t c = 25 o c collector current, i c [a] collector-emitter voltage, v ce [v] 01234 0 10 20 30 40 50 60 70 80 90 t c = 125 o c t c = 25 o c common emitter v ge = 15v t c = 25 o c t c = 125 o c ------ collector current, i c [a] collector-emitter voltage, v ce [v] -50 0 50 100 150 1 2 3 i c =10a 30a 60a 80a common emitter v ge =15v collector-emitter voltage, v ce [v] case temperature, t c [] ? 4 8 12 16 20 0 2 4 6 8 10 common emitter t c = - 40 o c i c =10a 80a 60a 30a collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 2 4 6 8 10 common emitter t c = 25 o c 80a 60a 30a i c = 10a collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 2 4 6 8 10 common emitter t c = 125 o c 80a 60a 30a i c = 10a collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] fig 1. typical output characteristics fig 2. typical saturation voltage characteristics fig 4. saturation voltage vs. v ge fig 3. saturation voltage vs. case temperature at varient current level fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge
www.fairchildsemi.com fgl60n100bntd fgl60n100bntd rev.a2 0 5 10 15 20 25 30 100 1000 10000 common emitter v ge = 0v, f = 1mhz t c = 25 o c cres coes cies capacitance [pf] collector-emitter voltage, v ce [v] 0 50 100 150 200 10 100 1000 10000 v cc =600v, i c =60a v ge =15v t c =25 o c tdoff tdon tr tf switching time [ns] gate resistance, r g [?] 10 20 30 40 50 60 100 1000 v cc =600v, rg=51 ? v ge =15v, t c =25 o c tdon tr tf tdoff switching time [ns] collector current, i c [a] 0 50 100 150 200 250 300 0 5 10 15 20 common emitter v cc =600v, r l =10 ? t c =25 o c gate-emitter voltage,v ge [v] gate charge, q g [nc] 1 10 100 1000 0.1 1 10 100 single nonrepetitive pulse t c = 25 o c curve must be darated linearly with increase in temperature 50us 100us 1ms dc operation i c max. (pulsed) i c max. (continuous) collector current , i c [a] collector-emitter voltage, v ce [v] 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 10 0.1 0.5 0.2 0.05 0.02 0.01 single pulse thermal response, z jc [ o c/w] rectangular pulse duration [sec] fig 7. capacitance characteristics fig 8. switching characteristics vs. gate resistance fig 9. switching ch aracteristics vs. collector current fig 10. gate charge characteristics fig 11. soa characteristics fig 12. transient thermal impedance of igbt
www.fairchildsemi.com fgl60n100bntd fgl60n100bntd rev.a2 fig 17. junction capacitance 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 t c = 25 o c t c = 100 o c forward voltage, v fm [v] forward current, i f [a] 0 40 80 120 160 200 240 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i rr t rr i f = 60a t c = 25 o c di/dt [a/ s] reverse recovery time, t rr [ns] 0 20 40 60 80 100 120 reverse recovery current i rr [a] 10 20 30 40 50 60 0.4 0.6 0.8 1.0 1.2 i rr t rr forward current, i f [a] reverse recovery time, t rr [ns] 4 6 8 10 12 di/dt=-20a/ s t c =25 o c reverse recovery current i rr [a] 0 300 600 900 1e-3 0.01 0.1 1 10 100 1000 t c = 150 o c t c = 25 o c reverse current, i r [ a] reverse voltage, v r [v] 0.1 1 10 100 0 50 100 150 200 250 t c = 25 o c capacitance, c j [pf] reverse voltage, v r [v] fig 14. reverse recovery characteristics vs. di/dt fig 13. forward characteristics fig 15. reverse recovery characteristics vs. forward current fig 16. reverse current vs. reverse voltage
fgl60n100bntd rev.a2 www.fairchildsemi.com fgl60n100bntd package dimension 5.45typ [5.45 0.30 ] 5.45typ [5.45 0.30 ] 4.90 0.20 20.00 0.20 (8.30) (8.30) (1.00) (0.50) (2.00) (7.00) (r1.00) (r2.00) ?3.30 0.20 (7.00) (1.50) (1.50) (1.50) 2.50 0.20 3.00 0.20 2.80 0.30 1.00 +0.25 ?0.10 0.60 +0.25 ?0.10 1.50 0.20 6.00 0.20 20.00 0.20 20.00 0.50 5.00 0.20 3.50 0.20 2.50 0.10 (9.00) (9.00) (2.00) (1.50) (0.15) (2.80) (4.00) (11.00) to-264 dimensions in millimeters
fgl60n100bntd rev.a2 trademarks the following are registered and unregister ed trademarks and service marks fairchild se miconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without furthe r notice to any products herein to improve reliability, function, or design. fairchild does not as sume any liability arising ou t of the application or use of any product or circuit described he rein; neither does it convey any lice nse under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therei n, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or syst ems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose fail ure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? crossvolt ? ctl? current transfer logic? ecospark ? fact quiet series? fact ? fast ? fastvcore? fps? frfet ? global power resource sm green fps? green fps? e-series? got? i-lo ? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? motion-spm? optologic ? optoplanar ? pdp-spm? power220 ? power247 ? poweredge ? power-spm? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? the power franchise ? ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? unifet? vcx? datasheet identification product status definition advance information formative or in design this data sheet contains the design s pecifications for product development. specifications may c hange in any manner without notice. preliminary first production this datasheet contai ns preliminary data; supplementary data will be published at a later date. fairchild se miconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet c ontains final specificati ons. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains specifications on a product that has been dis- continued by fairchild semiconductor.the datasheet is printed for refer- ence information only. tm rev. i29 tm www.fairchildsemi.com
|
